參數(shù)資料
型號: MRF422
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: HF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: 0.500 INCH, FM-4
文件頁數(shù): 1/1頁
文件大?。?/td> 17K
代理商: MRF422
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
NONE
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 200 mA
35
V
BVCES
IC = 100 mA
85
V
BVCBO
IC = 100 mA
85
V
BVEBO
IE = 10 mA
3.0
V
ICES
VCE = 28 V
20
mA
hFE
VCE = 5.0 V
IC = 5.0 A
10
30
120
---
Cob
VCB = 28 V
f = 1.0 MHz
420
pF
Pout
VCE = 28 V
f = 30 MHz
150
W(PEP)
GPE
ηηηη
IMD
VCC = 28 V
ICQ = 150 mA
Pout = 150 W (PEP)
IC(max) = 6.7 A
f = 30 MHz
10
13
45
-33
dB
%
dB
NPN SILICON RF POWER TRANSISTOR
MRF422
DESCRIPTION:
The
ASI MRF422 is Designed for 2.0
MHz to 30 MHz, 28 V High Power
Linear Amplifier Applications.
MAXIMUM RATINGS
I
20 A
V
40 V
PDISS
290 W @ TC = 25
OC
TJ
-65
OC to +150 OC
TSTG
-65
OC to +150 OC
θθθθ
JC
0.6
OC/W
PACKAGE STYLE .500 4L FLG
1 = COLLECTOR
3 = BASE
2 & 4 = EMITTER
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