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參數(shù)資料
| 型號(hào)： | MRF373ALSR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-360S, CASE 360C-05, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 328K |
| 代理商： | MRF373ALSR1 |
2
RF Device Data
Freescale Semiconductor
MRF373ALR1 MRF373ALSR1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID =1 μA)
V(BR)DSS
70
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 V, ID = 200 μA)
VGS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage
(VDS = 32 V, ID = 100 mA)
VGS(Q)
2.5
3.3
4.5
Vdc
Drain-Source On-Voltage
(VGS = 10 V, ID = 3 A)
VDS(on)
—
0.41
0.45
Vdc
Dynamic Characteristics
Input Capacitance
(VDS = 32 V, VGS = 0, f = 1 MHz)
Ciss
—
98.5
—
pF
Output Capacitance
(VDS = 32 V, VGS = 0, f = 1 MHz)
Coss
—
49
—
pF
Reverse Transfer Capacitance
(VDS = 32 V, VGS = 0, f = 1 MHz)
Crss
—
2
—
pF
Functional Characteristics (50 ohm system)
Common Source Power Gain
(VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz)
Gps
16.5
18.2
—
dB
Drain Efficiency
(VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz)
η
56
60
—
%
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| MRF373ALR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF373ALSR5 | 功能描述:射頻MOSFET電源晶體管 75W RF PWR LDMOS NI360LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF373AR1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF373ASR1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF373R1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF373S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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