- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96051 > MRF373ASR1 (FREESCALE SEMICONDUCTOR INC) UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MRF373ASR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 360C-05, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 337K |
| 代理商： | MRF373ASR1 |
1
MRF373AR1 MRF373ASR1
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large–signal, common source amplifier applica-
tions in 28/32 volt transmitter equipment.
Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture
Output Power — 75 Watts
Power Gain — 18.2 dB
Efficiency — 60%
100% Tested for Load Mismatch Stress at All Phase Angles
with 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts CW
Integrated ESD Protection
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal
Impedance Parameters
In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
70
Vdc
Gate–Source Voltage
VGS
– 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
MRF373AR1
Derate above 25
°C
MRF373ASR1
PD
197
1.12
278
1.59
Watts
W/
°C
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
MRF373AR1
MRF373ASR1
M2 (Minimum)
M1 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
MRF373AR1
MRF373ASR1
RθJC
0.89
0.63
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF373A/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
470 – 860 MHz, 75 W, 32 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–05, STYLE 1
NI–360
MRF373AR1
CASE 360C–05, STYLE 1
NI–360S
MRF373ASR1
MRF373AR1
MRF373ASR1
Motorola, Inc. 2002
G
D
S
REV 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF373AS | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF373A | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF377 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF3866R1 | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF3866R2G | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF373R1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF373S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF373SR1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF374 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF374A | 功能描述:射頻MOSFET電源晶體管 RF POWER LDMOS U650 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。