參數(shù)資料
型號: MRF373ASR1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CASE 360C-05, 3 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 337K
代理商: MRF373ASR1
MRF373AR1 MRF373ASR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID =1 A)
V(BR)DSS
70
Vdc
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
1
Adc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 V, ID = 200 A)
VGS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage
(VDS = 32 V, ID = 100 mA)
VGS(Q)
2.5
3.3
4.5
Vdc
Drain–Source On–Voltage
(VGS = 10 V, ID = 3 A)
VDS(on)
0.41
0.45
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 32 V, VGS = 0, f = 1 MHz)
Ciss
98.5
pF
Output Capacitance
(VDS = 32 V, VGS = 0, f = 1 MHz)
Coss
49
pF
Reverse Transfer Capacitance
(VDS = 32 V, VGS = 0, f = 1 MHz)
Crss
2
pF
FUNCTIONAL CHARACTERISTICS (50 ohm system)
Common Source Power Gain
(VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz)
Gps
16.5
18.2
dB
Drain Efficiency
(VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz)
η
56
60
%
Load Mismatch
(VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz,
Load VSWR at 10:1 at All Phase Angles)
ψ
No Degradation in Output Power
相關(guān)PDF資料
PDF描述
MRF373AS UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
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