- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96051 > MRF373ALSR1 (FREESCALE SEMICONDUCTOR INC) UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MRF373ALSR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-360S, CASE 360C-05, 2 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 328K |
| 代理商： | MRF373ALSR1 |
MRF373ALR1 MRF373ALSR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common source amplifier applica-
tions in 28/32 volt transmitter equipment.
Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture
Output Power — 75 Watts
Power Gain — 18.2 dB
Efficiency — 60%
Capable of Handling 10:1 VSWR @ 32 Vdc, 860 MHz,
75 Watts CW Output Power
Features
Integrated ESD Protection
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal
Impedance Parameters
Low Gold Plating Thickness on Leads.
L Suffix Indicates 40μ″ Nominal.
RoHS Compliant
In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +70
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
MRF373ALR1
Derate above 25°C
MRF373ALSR1
PD
197
1.12
278
1.59
W
W/°C
W
W/°C
Storage Temperature Range
Tstg
-65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
MRF373ALR1
MRF373ALSR1
RθJC
0.89
0.63
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
MRF373ALR1
MRF373ALSR1
M2 (Minimum)
M1 (Minimum)
Document Number: MRF373A
Rev. 6, 5/2006
Freescale Semiconductor
Technical Data
470-860 MHz, 75 W, 32 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B-05, STYLE 1
NI-360
MRF373ALR1
CASE 360C-05, STYLE 1
NI-360S
MRF373ALSR1
MRF373ALR1
MRF373ALSR1
G
D
S
Freescale Semiconductor, Inc., 2006. All rights reserved.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF373ALR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF373ASR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF373AS | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF373A | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF377 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF373ALSR5 | 功能描述:射頻MOSFET電源晶體管 75W RF PWR LDMOS NI360LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF373AR1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF373ASR1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF373R1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF373S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
發(fā)布緊急采購，3分鐘左右您將得到回復。