參數(shù)資料
型號(hào): MRF3106
元件分類(lèi): 小信號(hào)晶體管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: CASE 305A-01, 4 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 93K
代理商: MRF3106
ELECTRICAL CHARACTERISTICS — continued
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 28 V, IE = 0, f = 1.0 MHz)
MRF3104
MRF3105
MRF3106
COB
1.5
3.5
5.5
pF
FUNCTIONAL TESTS
Common Emitter Amplifier Gain
(VCE = 20 V, IC = 120 mA, Pout = 0.5 W, f = 1.6 GHz)
MRF3104
(VCE = 20 V, IC = 120 mA, Pout = 0.8 W, f = 1.6 GHz)
MRF3105
(VCE = 20 V, IC = 240 mA, Pout = 1.6 W, f = 1.6 GHz)
MRF3106
Gpe
10.5
9.0
8.0
11.5
10.0
9.0
dB
Output Load Mismatch
(VCE = 20 V, IC = 120 mA, Pout = 0.5 W, f = 1.6 GHz)
MRF3104
(VCE = 20 V, IC = 120 mA, Pout = 0.8 W, f = 1.6 GHz)
MRF3105
(VCE = 20 V, IC = 240 mA, Pout = 1.6 W, f = 1.6 GHz)
MRF3106
No Degradation in
Output Power
Gain Linearity
(VCE = 20 V, IC = 120 mA, f = 1.6 GHz,
Po1 = 0.5 W, Po2 = 0.5 mW)
MRF3104
(VCE = 20 V, IC = 120 mA, f = 1.6 GHz,
Po1 = 0.8 W, Po2 = 0.5 mW)
MRF3105
(VCE = 20 V, IC = 240 mA, f = 1.6 GHz,
Po1 = 1.6 W, Po2 = 0.5 mW)
MRF3106
LG
–0.2 to 1.0
dB
0
200
100
1.5
1.0
0.5
0.0
Pin, INPUT POWER (mW)
Freq = 1.6 GHz, IC = 120 mA
15 V
VCE = 20 V
10 V
Figure 1. Output Power versus Input Power
P o
,OUTPUT
POWER
(W)
TYPICAL CHARACTERISTICS
MRF3104
VCE
IC
f
S11
S21
S12
S22
VCE
(V)
IC
(mA)
f
(MHz)
Mag
Deg
Mag
Deg
Mag
Deg
Mag
Deg
20
120
1550
1575
1600
1625
1650
0.75
0.76
123
122
121
1.97
1.93
1.91
1.80
1.85
21
20
19
18
17
0.08
0.09
44
43
42
0.31
0.32
0.33
–113
–115
–116
–117
–119
Table 1. Common Emitter S–Parameters
2
REV 6
相關(guān)PDF資料
PDF描述
MRF3104 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
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