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參數(shù)資料
| 型號： | MRF3106 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 305A-01, 4 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 93K |
| 代理商： | MRF3106 |
The RF Line
Microwave Linear
Power Transistors
Designed for Class A, Common Emitter Linear Power Amplifiers.
Specified 20 Volt, 1.6 GHz Characteristics:
MRF3104
MRF3105
MRF3106
Output Power
0.5 W
0.8 W
1.6 W
Power Gain
10.5 dB
9 dB
8 dB
Low Parasitic Microwave Stripline Package
Gold Metalization for Improved Reliability
Diffused Ballast Resistors
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
22
Vdc
Collector–Emitter Voltage
VCES
50
Vdc
Emitter–Base Voltage
VEBO
3.5
Vdc
Collector Current
MRF3104, MRF3105
MRF3106
IC
0.4
0.8
Adc
Operating Junction Temperature
Tj
200
°C
Storage Temperature
Tstg
–65 to +125
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case, DC
MRF3104
MRF3105
MRF3106
RθJC (DC)
40
35
22
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
BVCEO
22
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 10 mA, VBE = 0)
BVCES
50
—
Vdc
Collector–Base Breakdown Voltage
(IC = 1 mA, IE = 0)
BVCBO
45
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 0.25 mA, IC = 0)
BVEBO
3.5
—
Vdc
Collector Cutoff Current
MRF3104, MRF3105
(VCB = 28 V, IE = 0)
MRF3106
ICBO
—
0.25
0.5
mAdc
ON CHARACTERISTICS
DC Current Gain
(VCE = 5.0 V, IC = 100 mA)
hFE
20
35
120
—
(continued)
MRF3104
MRF3105
MRF3106
8.0–12 dB GAIN
1.55–1.65 GHz
MICROWAVE LINEAR
POWER TRANSISTORS
CASE 305A–01, STYLE 1
(.204
″ PILL)
Order this document
by MRF3104/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 6
相關PDF資料 |
PDF描述 |
|---|---|
| MRF3104 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF3105 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF313 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF321 | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MRF323 | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF313 | 功能描述:射頻雙極小信號晶體管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| MRF314 | 功能描述:射頻雙極電源晶體管 30-200MHz 30Watts 28Volt Gain 10dB RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| MRF314A | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF315 | 制造商:Ferraz Shawmut 功能描述: |
| MRF315A | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
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