- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96051 > MRF313 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF313 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 305A-01, 4 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 84K |
| 代理商： | MRF313 |
The RF Line
NPN Silicon
High-Frequency Transistor
. . . designed for wideband amplifier, driver or oscillator applications in military,
mobile, and aircraft radio.
Specified 28 Volt, 400 MHz Characteristics —
Output Power = 1.0 Watt
Power Gain = 15 dB Min
Efficiency = 45% Typ
Emitter Ballast and Low Current Density for Improved MTBF
Common Emitter for Improved Stability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
30
Vdc
Collector–Base Voltage
VCBO
40
Vdc
Emitter–Base Voltage
VEBO
3.0
Vdc
Collector Current — Continuous
IC
150
mAdc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
6.1
35
Watts
mW/
°C
Storage Temperature Range
Tstg
–65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
28.5
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
V(BR)CEO
30
—
Vdc
Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0)
V(BR)CES
35
—
Vdc
Collector–Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0)
V(BR)CBO
35
—
Vdc
Emitter–Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0)
V(BR)EBO
3.0
—
Vdc
Collector Cutoff Current (VCE = 20 Vdc, IB = 0)
ICEO
—
1.0
mAdc
(continued)
MRF313
1.0 W, 400 MHz
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
CASE 305A–01, STYLE 1
Order this document
by MRF313/D
SEMICONDUCTOR TECHNICAL DATA
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF321 | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MRF323 | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MRF327 | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MRF329 | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MRF340 | VHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF314 | 功能描述:射頻雙極電源晶體管 30-200MHz 30Watts 28Volt Gain 10dB RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| MRF314A | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF315 | 制造商:Ferraz Shawmut 功能描述: |
| MRF315A | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| MRF316 | 制造商:M/A-COM Technology Solutions 功能描述:TRANS GP BJT NPN 35V 9A 4PIN CASE 316-01 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。