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參數(shù)資料
| 型號： | MRF281ZR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-200Z, CASE 458C-03, 2 PIN |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 283K |
| 代理商： | MRF281ZR1 |
MRF281SR1 MRF281ZR1
5
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 458B-03
ISSUE E
NI-200S
MRF281SR1
C
F
E
H
K
2X
1
2
3
NOTES:
1. CONTROLLING DIMENSIONS: INCHES.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. ALL DIMENSIONS ARE SYMMETRICAL ABOUT
CENTERLINE UNLESS OTHERWISE NOTED.
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
D
2X
Z
4X
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.180
0.190
4.572
4.83
INCHES
B
0.140
0.150
3.556
3.81
C
0.082
0.116
2.083
2.946
D
0.047
0.053
1.194
1.346
E
0.004
0.010
0.102
0.254
F
0.004
0.006
0.102
0.152
H
0.025
0.031
0.635
0.787
K
0.060
0.110
1.524
2.794
M
0.197
0.203
5.004
5.156
N
0.177
0.183
4.496
4.648
R
0.147
0.153
3.734
3.886
S
0.157
0.163
3.988
4.14
Z
0.020
0.508
bbb
0.010 REF
0.254 REF
ccc
0.015 REF
0.381 REF
M
A
M
bbb
B M
T
M
A
M
ccc
B M
T
M
A
M
ccc
B M
T
R (LID)
S (INSULATOR)
SEATING
PLANE
T
M
A
M
ccc
B M
T
N
(LID)
A
(FLANGE)
M
(INSULATOR)
M
A
M
ccc
B M
T
B
(FLANGE)
CASE 458C-03
ISSUE E
NI-200Z
MRF281ZR1
C
E
K
2X
1
2
3
NOTES:
1. CONTROLLING DIMENSIONS: INCHES.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H (PACKAGE COPLANARITY): THE
BOTTOM OF LEADS AND REFERENCE PLANE T
MUST BE COPLANAR WITHIN DIMENSION H.
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
D
2X
Z
4X
Y
F
H
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.180
0.190
4.572
4.830
INCHES
B
0.140
0.150
3.556
3.810
C
0.082
0.116
2.083
2.946
D
0.047
0.053
1.194
1.346
E
0.004
0.010
0.102
0.254
H
0.000
0.004
0.000
0.102
F
0.004
0.006
0.102
0.152
K
0.050
0.090
1.270
2.286
M
0.197
0.203
5.004
5.156
N
0.177
0.183
4.496
4.648
R
0.147
0.153
3.734
3.886
S
0.157
0.163
3.988
4.140
Z
R .020
R .508
M
A
M
bbb
B M
T
M
A
M
ccc
B M
T
M
A
M
ccc
B M
T
R (LID)
S (INSULATOR)
B
(FLANGE)
M
A
M
ccc
B M
T
N
(LID)
SEATING
PLANE
T
AA
(FLANGE)
M
(INSULATOR)
M
A
M
ccc
B M
T
B
Y
0.020
0.040
0.508
1.016
bbb
.010 REF
0.254 REF
ccc
.015 REF
0.381 REF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF282 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF282S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF282SR1 | 功能描述:IC MOSFET RF N-CHAN NI-200S RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF282Z | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF282ZR1 | 功能描述:射頻MOSFET電源晶體管 RF PWR FET SOE PKG RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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