參數(shù)資料
型號(hào)： MRF281SR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-200S, CASE 458B-03, 2 PIN
文件頁(yè)數(shù)： 1/7頁(yè)
文件大小： 283K
代理商： MRF281SR1
MRF281SR1 MRF281ZR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for digital and analog cellular PCN and PCS base station
applications with frequencies from 1000 to 2500 MHz. Characterized for
operation Class A and Class AB at 26 volts in commercial and industrial
applications.
Specified Two-Tone Performance @ 1930 MHz, 26 Volts
Output Power — 4 Watts PEP
Power Gain — 11 dB
Efficiency — 30%
Intermodulation Distortion — -29 dBc
Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 4 Watts CW Output Power
Features
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
S-Parameter Characterization at High Bias Levels
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
20
0.115
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
5.74
°C/W
Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = 0, ID = 10 μAdc)
V(BR)DSS
65
74
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0)
IDSS
—
10
μAdc
Gate-Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
—
1
μAdc
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
LIFETIME
BUY
LAST
ORDER
4
APR
09
LAST
SHIP
3
OCT
09
Document Number: MRF281
Rev. 6, 10/2008
Freescale Semiconductor
Technical Data
MRF281SR1
MRF281ZR1
1930-1990 MHz, 4 W, 26 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 458B-03, STYLE 1
NI-200S
MRF281SR1
CASE 458C-03, STYLE 1
NI-200Z
MRF281ZR1
Freescale Semiconductor, Inc., 2008. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF281SR1_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF281ZR1 功能描述:IC MOSFET RF N-CHAN NI-200Z RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF282 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF282S 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF282SR1 功能描述:IC MOSFET RF N-CHAN NI-200S RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
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