- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄371144 > MRF21125 (MOTOROLA INC) RF POWER FIELD EFFECT TRANSISTORS PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF21125 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | RF POWER FIELD EFFECT TRANSISTORS |
| 中文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-880, CASE 465B-03, 3 PIN |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 381K |
| 代理商： | MRF21125 |
1
MRF21125 MRF21125S MRF21125SR3
Motorola, Inc. 2002
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for W–CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN–PCS/cellular radio and WLL
applications.
Typical 2–carrier W–CDMA Performance for V
DD
= 28 Volts, I
DQ
= 1600
mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz,
adjacent channels at
±
5 MHz , ACPR and IM3 measured in 3.84 MHz
bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF.
Output Power — 20 Watts
Efficiency — 18%
Gain — 13 dB
IM3 — –43 dBc
ACPR — –45 dBc
100% Tested under 2–carrier W–CDMA
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 125 Watts (CW)
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
65
Vdc
Gate–Source Voltage
V
GS
+15, –0.5
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
330
1.89
Watts
W/
°
C
Storage Temperature Range
T
stg
–65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.53
°
C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF21125/D
SEMICONDUCTOR TECHNICAL DATA
2170 MHz, 125 W, 28 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465C–02, STYLE 1
(NI–880S)
(MRF21125S)
CASE 465B–03, STYLE 1
(NI–880)
(MRF21125)
REV 5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF21125SR3 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF21125S | RF POWER FIELD EFFECT TRANSISTORS |
| MRF255PHT | RF Power Field-Effect Transistor |
| MRF255 | N-CHANNEL BROADBAND RF POWER FET |
| MRF275L | RF MOSFET(射頻MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF21125R3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF21125S | 制造商:Motorola Inc 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
| MRF21125SR3 | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21180 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:RF Power Field Effect Transistor |
| MRF21180R6 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:RF Power Field Effect Transistor |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。