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參數(shù)資料
| 型號： | MRF275L |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF MOSFET(射頻MOS場效應管) |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 333-04, 6 PIN |
| 文件頁數(shù)： | 1/16頁 |
| 文件大小： | 229K |
| 代理商： | MRF275L |
1
MRF275L
MOTOROLA RF DEVICE DATA
Motorola, Inc. 2000
The RF MOSFET Line
N–Channel Enhancement–Mode
Designed for broadband commercial and military applications using single
ended circuits at frequencies to 500 MHz. The high power, high gain and
broadband performance of this device makes possible solid state transmitters
for FM broadcast or TV channel frequency bands.
Guaranteed Performance @ 500 MHz, 28 Vdc
Output Power — 100 Watts
Power Gain — 8.8 dB Typ
Efficiency — 55% Typ
100% Ruggedness Tested At Rated Output Power
Low Thermal Resistance
Low Crss — 17 pF Typ @ VDS = 28 Volts
S–Parameters Available for Download into
Frequency Domain Simulators.
See http://mot–sps.com/rf/designtds/
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VGS
ID
PD
65
Vdc
Gate–Source Voltage
±
20
Vdc
Drain Current — Continuous
13
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
270
1.54
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.65
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 50 mA)
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
—
—
2.5
mAdc
Gate–Body Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
—
—
1.0
μ
Adc
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF275L/D
SEMICONDUCTOR TECHNICAL DATA
100 W, 28 V, 500 MHz
N–CHANNEL
BROADBAND
RF POWER FET
CASE 333–04, STYLE 2
D
G
S
REV 2
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