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參數(shù)資料
| 型號： | MRF18085AR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 374K |
| 代理商： | MRF18085AR3 |
5-366
Freescale Semiconductor
Wireless RF Product Device Data
MRF18085AR3 MRF18085ALSR3
TYPICAL CHARACTERISTICS
1000
10
17
0
Pout, OUTPUT POWER (WATTS)
Figure 3. Power Gain versus Output Power
G
ps
,POWER
GAIN
(dB)
16
15
14
13
12
11
1
10
100
Pout, OUTPUT POWER (WATTS)
Figure 4. Power Gain versus Output Power
G
ps
,POWER
GAIN
(dB)
1000
9
17
1
TC = 25_C
50
_C
Pout, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
G
ps
,POWER
GAIN
(dB)
VDD = 26 Vdc
IDQ = 800 mA
f = 1840 MHz
100
10
16
15
14
13
12
11
10
85
_C
1900
0
120
1800
Pin = 8 W
f, FREQUENCY (MHz)
Figure 6. Output Power versus Frequency
P
out
,OUTPUT
POWER
(W
A
TTS)
VDD = 26 Vdc
IDQ = 800 mA
TC = 25_C
4 W
1 W
0.5 W
100
80
60
40
20
1820
1840
1860
1880
1950
10
17
1750
28
0
Gps @ 30 W
f, FREQUENCY (MHz)
Figure 7. Power Gain versus Frequency
G
ps
,POWER
GAIN
(dB)
INPUT
RETURN
LOSS
(dB)
IRL,
VDD = 26 Vdc
IDQ = 800 mA
TC = 25_C
Gps @ 80 W
IRL @ 80 W
IRL @ 30 W
16
4
15
8
14
12
13
16
12
20
11
24
1800
1850
1900
η
1000
10
16
0.1
0
60
Gps
Pout, OUTPUT POWER (WATTS)
Figure 8. Power Gain and Efficiency versus
Output Power
G
ps
,POWER
GAIN
(dB)
,DRAIN
EFFICIENCY
(%)
η
VDD = 26 Vdc
IDQ = 800 mA
f = 1840 MHz
TC = 25_C
15
50
14
40
13
30
12
20
11
10
1
10
100
1000
8
17
0.1
24 V
IDQ = 800 mA
f = 1840 MHz
TC = 25_C
16
15
14
13
12
11
10
9
1
10
100
VDD = 20 V
28 V
32 V
IDQ = 1000 mA
VDD = 26 Vdc
f = 1840 MHz
TC = 25_C
800 mA
600 mA
400 mA
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| MRF18090BR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF18090BSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF18085AR5 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF18085B | 制造商:Motorola Inc 功能描述: |
| MRF18085BLR3 | 功能描述:MOSFET N-CHAN 85W 26V NI-78O RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF18085BLSR3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF18085BR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
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