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參數(shù)資料
| 型號： | MRF18085AR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 374K |
| 代理商： | MRF18085AR3 |
5-364
Freescale Semiconductor
Wireless RF Product Device Data
MRF18085AR3 MRF18085ALSR3
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 Adc)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
10
Adc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 Adc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 600 mAdc)
VGS(Q)
2.5
3.9
4.5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.15
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
6.0
—
S
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
—
3.6
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Common-Source Amplifier Power Gain @ 85 W (2)
(VDD = 26 Vdc, IDQ = 800 mA, f = 1805 - 1880 MHz)
Gps
13.5
15
—
dB
Drain Efficiency @ 85 W (2)
(VDD = 26 Vdc, IDQ = 800 mA, f = 1805 - 1880 MHz)
η
48
52
—
%
Input Return Loss @ 85 W (2)
(VDD = 26 Vdc, IDQ = 800 mA, f = 1805 - 1880 MHz)
IRL
—
-12
-9
dB
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 800 mA, f = 1805 - 1880 MHz)
P1dB
83
90
—
Watts
Output Mismatch Stress @ P1dB
(VDD = 26 Vdc, IDQ = 800 mA, f = 1805 MHz,
VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
1. Part is internally matched both on input and output.
2. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1800 band, ensuring
batch-to-batch consistency.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF18085AR5 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF18085B | 制造商:Motorola Inc 功能描述: |
| MRF18085BLR3 | 功能描述:MOSFET N-CHAN 85W 26V NI-78O RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF18085BLSR3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF18085BR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
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