- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96050 > MRF18090BR3 (MOTOROLA INC) L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MRF18090BR3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-880, CASE 465B-03, 2 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 380K |
| 代理商： | MRF18090BR3 |
MRF18090BR3 MRF18090BSR3
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from
1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in class AB for GSM and EDGE cellular radio
applications.
GSM and EDGE Performances, Full Frequency Band
Power Gain — 13.5 dB (Typ) @ 90 Watts (CW)
Efficiency — 45% (Typ) @ 90 Watts (CW)
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
250
1.43
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.7
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF18090B/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF18090BR3
MRF18090BSR3
1.90 - 1.99 GHz, 90 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFETS
CASE 465B-03, STYLE 1
NI-880
MRF18090BR3
CASE 465C-02, STYLE 1
NI-880S
MRF18090BSR3
Motorola, Inc. 2004
REV 5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF18090BSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF181ZR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF181ZR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF181SR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF181SR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF18090BS | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF18090BSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF181S | 制造商:MOTOROLA 功能描述:SHELF STOCK |
| MRF182 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF182S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B 制造商:Njs 功能描述:MOSFET Transistor, N-Channel, SOT-391B |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。