參數(shù)資料
型號: MRF18030BSR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-400S, CASE 465F-04, 2 PIN
文件頁數(shù): 4/8頁
文件大?。?/td> 342K
代理商: MRF18030BSR3
MRF18030BR3 MRF18030BLR3 MRF18030BSR3 MRF18030BLSR3
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
Figure 3. Wideband Gain and IRL at 30 W and
15 W Output Power
Figure 4. Output Power versus Frequency
Figure 5. Power Gain versus Output Power
Figure 6. Power Gain versus Output Power
Figure 7. Power Gain versus Output Power
Figure 8. Power Gain and Efficiency versus
Output Power
INPUT
RETURN
LOSS
(dB)
IRL,
10
1850
30
IRL @ 30 W
Gps @ 15 W
VDD = 26 Vdc
IDQ = 250 mA
T = 25
_C
f, FREQUENCY (MHz)
G
ps
,POWER
GAIN
(dB)
Gps @ 30 W
IRL @ 15 W
11
25
12
20
13
15
14
10
15
5
16
0
1900
1950
2000
2050
f, FREQUENCY (MHz)
2020
0
40
1880
Pin = 2 W
VDD = 26 Vdc
IDQ = 250 mA
T = 25
_C
1 W
0.5 W
0.25 W
5
10
15
20
25
30
35
1900
1920
1940
1960
1980
2000
P out
,
OUTPUT
POWER
(W
A
TTS)
100
16
0.1
Pout, OUTPUT POWER (WATTS)
G
ps
,POWER
GAIN
(dB)
IDQ = 400 mA
300 mA
VDD = 26 Vdc
f = 1960 MHz
T = 25
_C
200 mA
100 mA
15
14
13
12
11
10
110
85
_C
100
15
0.1
T = 25
_C
VDD = 26 Vdc
IDQ = 250 mA
f = 1960 MHz
Pout, OUTPUT POWER (WATTS)
G
ps
,POWER
GAIN
(dB)
55
_C
14
13
12
11
10
9
110
0
100
16
0.1
Gps
h
VDD = 26 Vdc
IDQ = 250 mA
f = 1960 MHz
T = 25
_C
Pout, OUTPUT POWER (WATTS)
G
ps
,POWER
GAIN
(dB)
15
14
13
12
11
10
50
40
30
20
10
60
110
,DRAIN
EFFICIENCY
(%
)
η
100
15
VDD = 22 V
24 V
IDQ = 250 mA
f = 1960 MHz
T = 25
_C
Pout, OUTPUT POWER (WATTS)
G
ps
,POWER
GAIN
(dB)
28 V
30 V
14
13
12
11
10
110
26 V
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