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參數(shù)資料
| 型號： | MRF18030BSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-400S, CASE 465F-04, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 342K |
| 代理商： | MRF18030BSR3 |
MRF18030BR3 MRF18030BLR3 MRF18030BSR3 MRF18030BLSR3
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C, 50 ohm system unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 Adc)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
1
Adc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 Adc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 250 mAdc)
VGS(Q)
2
3.9
4.5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.29
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc)
gfs
—
2
—
S
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.3
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture) (2)
Output Power, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 250 mA, f = 1930 - 1990 MHz)
P1dB
27
30
—
Watts
Common-Source Amplifier Power Gain @ 30 W
(VDD = 26 Vdc, IDQ = 250 mA, f = 1930 - 1990 MHz)
Gps
13
14
—
dB
Drain Efficiency @ 30 W
(VDD = 26 Vdc, IDQ = 250 mA, f = 1930 - 1990 MHz)
η
46.5
50
—
%
Input Return Loss @ 30 W
(VDD = 26 Vdc, IDQ = 250 mA, f = 1930 - 1990 MHz)
IRL
—
-12
-9
dB
Output Mismatch Stress @ 30 W
(VDD = 26 Vdc, IDQ = 250 mA, f1 = 1930 - 1990 MHz,
VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
(2) Device specifications obtained on a Production Test Fixture.
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