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參數(shù)資料
| 型號(hào)： | MRF18030BSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-400S, CASE 465F-04, 2 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 342K |
| 代理商： | MRF18030BSR3 |
MRF18030BR3 MRF18030BLR3 MRF18030BSR3 MRF18030BLSR3
MOTOROLA RF DEVICE DATA
C1
1.8 pF, 100B Chip Capacitor
C2
0.8 pF, 100B Chip Capacitor
C3
0.8 pF, 100B Chip Capacitor
C4, C5
1.2 pF, 100B Chip Capacitors
C6, C7, C8
8.2 pF, 100B Chip Capacitors
C9
220 mF, 63 V Electrolytic Capacitor
R1
1.0 k, 1/8 W Chip Resistor (0805)
R2, R3
10 k, 1/8 W Chip Resistors (0805)
Z1
0.496″ x 0.087″ Microstrip
Z2
1.022″ x 0.087″ Microstrip
Z3
0.257″ x 0.633″ Microstrip
Z4
0.189″ x 0.394″ Microstrip
Z5
0.335″ x 0.394″ Microstrip
Z6
0.616″ x 0.087″ Microstrip
Z7
0.845″ x 0.087″ Microstrip
Z8
0.366″ x 0.087″ Microstrip
Z9
≈0.500″ x 0.087″ Microstrip
Figure 1. 1930 - 1990 MHz Test Fixture Schematic
Figure 2. 1930 - 1990 MHz Test Fixture Component Layout
RF
INPUT
RF
OUTPUT
Z1
VGG
C2
C6
Z3
DUT
VDD
Z4
Z5
C1
Z7
R2
C7
R1
C9
C8
+
Z2
R3
Z9
Z8
C3
C5
C4
Z6
VBIAS
Ground
VSUPPLY
R2
MRF18030B
(bias)
(supply)
R3
C7
R1
C2
C1
C8
C4
C5
C3
C6
C9
CUT
OUT
AREA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| MRF1803BR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS |
| MRF1803BSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS |
| MRF18060A | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF18060ALR3 | 功能描述:射頻MOSFET電源晶體管 60W GSM 1.8GHZ RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF18060ALR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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