參數(shù)資料
型號(hào): MRF166C
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CASE 319-07, 6 PIN
文件頁(yè)數(shù): 3/9頁(yè)
文件大?。?/td> 178K
代理商: MRF166C
Figure 1. MRF166C 500 MHz Test Circuit
R2
R3
RFC2
RFC1
C11
+
+
Vdc
R1
RF
INPUT
DUT
Z2
Z4
C7
C6
RF
OUTPUT
VDD = 28 V
C4
C9
C8
C10
C5
BIAS
Z3
C1
C3
Z1
C2
C1, C7
200 pF, Chip Capacitor
C2, C6
2–10 pF, Trimmer Capacitor, Johansen
C3
27 pF, ATC 100 mil Chip Capacitor
C4, C8
0.1
F, Chip Capacitor
C5
15 pF, ATC 100 mil Chip Capacitor
C9, C10
680 pF, Feedthru Capacitor
C11
50
F, 50 V, Electrolytic Capacitor
R1
120
, 1/2 W Resistor
R2
10 k
, 1/2 W Resistor
R3
1 k
, 1/2 W Resistor
RFC1
Ferroxcube VK200 19/4B
RFC2
10 Turns AWG #18, 0.125
″ I.D., Enameled
Board Material
0.062
″ Teflon Fiberglass
1 oz. Copper Clad Both Sides
εr = 2.56
350 mils
600 mils
C2
C3
C5
C6
825 mils
1650 mils
Z1
0.120
″ x 3.3″, Microstrip Line
Z2
0.120
″ x 2.1″, Microstrip Line
Z3, Z4
0.120
″ x 0.25″, Microstrip Line
TYPICAL CHARACTERISTICS
100
1
2
5
10
20
50
25
20
15
10
5
0
Coss
Ciss
Crss
VGS = 0 V
f = 1 MHz
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 2. Capacitance versus Drain–Source Voltage
C,
CAP
ACIT
ANCE
(pF)
100
10
0
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 3. DC Safe Operating Area
10
1
0.1
I D
,DRAIN
CURRENT
(AMPS)
TC = 25°C
3
REV 10
相關(guān)PDF資料
PDF描述
MRF166W 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
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MRF175GV UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
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