- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96049 > MRF177 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MRF177 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 744A-01, 8 PIN |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 214K |
| 代理商： | MRF177 |
The RF MOSFET Line
RF Power
Field Effect Transistors
N–Channel Enhancement Mode MOSFET
Designed for broadband commercial and military applications up to 400 MHz
frequency range. Primarily used as a driver or output amplifier in push–pull
configurations. Can be used in manual gain control, ALC and modulation
circuits.
Typical Performance at 400 MHz, 28 V:
Output Power — 100 W
Gain — 12 dB
Efficiency — 60%
Low Thermal Resistance
Low Crss — 10 pF Typ @ VDS = 28 Volts
Ruggedness Tested at Rated Output Power
Nitride Passivated Die for Enhanced Reliability
Excellent Thermal Stability; Suited for Class A
Operation
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Drain–Gate Voltage (RGS = 1.0 M)
VDGR
65
Vdc
Gate–Source Voltage
VGS
±40
Vdc
Drain Current — Continuous
ID
16
Adc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25
°C
PD
270
1.54
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Temperature Range
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction–to–Case
R
θJC
0.65
°C/W
(1) Total device dissipation rating applies only when the device is operated as an RF push–pull amplifier.
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF177
100 W, 28 V, 400 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 744A–01, STYLE 2
2
1, 4
3
6
5, 8
7
Order this document
by MRF177/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF18030ALR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF18030ALSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF18030AR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF18030AR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF18030ASR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF18030A | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF18030ALR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF18030ALSR3 | 功能描述:IC MOSFET RF N-CHAN NI-400S RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF18030ALSR5 | 功能描述:IC MOSFET RF N-CHAN NI-400S RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF18030BLR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。