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參數(shù)資料
| 型號： | MRF177 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 744A-01, 8 PIN |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 214K |
| 代理商： | MRF177 |
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic (1)
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 50 mA)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
—
2.0
mAdc
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
—
1.0
Adc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = 10 V, ID = 50 mA)
VGS(th)
1.0
3.0
6.0
Vdc
Drain–Source On–Voltage
(VGS = 10 V, ID = 3.0 A)
VDS(on)
—
1.4
Vdc
Forward Transconductance
(VDS = 10 V, ID = 2.0 A)
gfs
1.8
2.2
—
mhos
DYNAMIC CHARACTERISTICS (1)
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
—
100
—
pF
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Coss
—
105
—
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Crss
—
10
—
pF
FUNCTIONAL CHARACTERISTICS (Figure 8) (2)
Common Source Power Gain
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA)
GPS
10
12
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA)
η
55
60
—
%
Electrical Ruggedness
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA,
Load VSWR = 30:1, All Phase Angles At Frequency of Test)
ψ
No Degradation
in Output Power
Before & After Test
(1) Note each transistor chip measured separately
(2) Both transistor chips operating in push–pull amplifier
2
REV 9
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