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參數(shù)資料
| 型號(hào)： | MRF166C |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 319-07, 6 PIN |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 178K |
| 代理商： | MRF166C |
The RF MOSFET Line
RF Power
Field Effect Transistors
N–Channel Enhancement Mode MOSFETs
Designed primarily for wideband large–signal output and driver from 30 – 500
MHz.
MRF166C — Guaranteed Performance at 500 MHz, 28 Vdc
Output Power = 20 W
Gain = 13.5 dB
Efficiency = 50%
Replacement for Industry Standards such as MRF136, DV2820, BLF244,
SD1902, and ST1001
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Facilitates Manual Gain Control, ALC and Modulation Techniques
Excellent Thermal Stability, Ideally Suited for Class A Operation
Low Crss — 4.0 pF @ VDS = 28 V
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Gate Voltage
VDSS
65
Vdc
Drain–Gate Voltage
(RGS = 1.0 M)
VDGR
65
Vdc
Gate–Source Voltage
VGS
±20
Adc
Drain Current — Continuous
ID
4.0
Adc
Total Device Dissipation @ TC = 25°C
Derate Above 25
°C
PD
70
0.4
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to 150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
2.5
°C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF166C
20 W, 500 MHz
MOSFET
BROADBAND
RF POWER FETs
CASE 319–07, STYLE 3
D
G
S
Order this document
by MRF166C/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 10
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| MRF166W | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF166W | 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 65V 8A - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF171 | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF171A | 功能描述:射頻MOSFET電源晶體管 100-200MHz 45Watts 28Volt Gain 17dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF171AMP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF172 | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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