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參數資料
| 型號： | MRF157 |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 368-03, 2 PIN |
| 文件頁數： | 4/7頁 |
| 文件大?。?/td> | 190K |
| 代理商： | MRF157 |
4
3
2
1
0
20
40
60
80
100
Pin, POWER INPUT (WATTS)
P
,POWER
OUTPUT
(kW)
out
VDD = 60 V
IDQ = 2 x 800 mA
f = 30 MHz
t1 = 1 ms (See Fig. 9)
t2 = 10 ms (See Fig. 9)
Figure 8. Output Power versus Input Power
Under Pulse Conditions (2 x MRF157)
Figure 9. Thermal Response versus
Pulse Width
Figure 10. Series Equivalent Impedance
0.01
0.02
0.05
0.1
0.2
0.5
1
10-2
10-1
110
102
103
104
PULSE WIDTH, t (ms)
D = 0.5
0.2
0.1
0.05
0.02
SINGLE PULSE
RθJC(t) = r(t) RθJC
RθJC = 0.13°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
r(t),
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
Note: Pulse data for this graph was taken in a push–pull circuit similar
Note: to the one shown. However, the output matching network was
Note: modified for the higher level of peak power.
Note: To determine ZOL*, use formula
= ZOL*
(VCC – Vsat)2
2Po
f = 100 MHz
2.0
4.0
7.5
15
30
60
VDD = 50 V
IDQ = 800 mA
Pout = 600 W
Zo = 10
Zin
4
REV 1
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| MRF1570NT1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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