參數(shù)資料
型號(hào): MRF15090
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 2 CHANNEL, L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CASE 375A-01, 5 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 352K
代理商: MRF15090
AR
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INF
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INFORMA
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MRF15090
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
G
pe
,POWER
GAIN
(dB)
G
pe
,POWER
GAIN
(dB)
Pout
Gpe
VCC = 26 Vdc
ICQ = 250 mA
Single Tone
5 W
10 W
Pin = 15 W
20
Figure 1. Output Power & Power Gain
versus Input Power
120
Pin, INPUT POWER (WATTS)
20
0
8
40
80
60
Figure 2. Output Power versus Frequency
100
0
1440
f, FREQUENCY (MHz)
1480
80
40
20
1520
4
12
16
1560
60
P out
,OUTPUT
POWER
(W
ATTS)
1400
1600
0
P out
,OUTPUT
POWER
(W
ATTS)
100
9.0
8.5
8.0
7.5
G
pe
,GAIN
(dB)
1460
1500
1540
1580
1420
VCC = 26 Vdc
ICQ = 250 mA
f1 = 1490 MHz
f2 = 1490.1 MHz
7th
η
Gpe
VSWR
VCC = 26 Vdc
f1 = 1490 MHz
f2 = 1490.1 MHz
ICQ = 100 mA
750 mA
500 mA
250 mA
VCC = 26 Vdc
f1 = 1490 MHz
f2 = 1490.1 MHz
100 mA
250 mA
500 mA
ICQ = 750 mA
120
Figure 3. Intermodulation Distortion
versus Output Power
-20
Pout, OUTPUT POWER (WATTS) PEP
-50
-60
40
-40
-30
Figure 4. Performance in Broadband Circuit
10
0
1440
f, FREQUENCY (MHz)
1480
8
4
2
1520
20
60
80
1540
6
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
Figure 5. Intermodulation Distortion
versus Output Power
-20
0.1
Pout, OUTPUT POWER (WATTS) PEP
-50
-60
10
-40
-30
Figure 6. Power Gain versus Output Power
2
Pout, OUTPUT POWER (WATTS) PEP
6
1
10
1
100
1400
1560
0.1
0
3
4
5
7
8
9
100
9
7
3
1
5
1460
1500
1420
-25
-55
-45
-35
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
5th
3rd Order
50
20
0
40
30
10
1.0
2.0
2.5
3.0
INPUT
VSWR
η
,COLLECT
OR
EFFICIENCY
(%)
VCC = 26 Vdc
ICQ = 250 mA
f = 1490 MHz Single Tone
Pout = 90 W (PEP)
VCC = 26 Vdc
ICQ = 250 mA
1.5
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