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參數(shù)資料
| 型號(hào)： | MRF150 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | 0.500 INCH, FM-4 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 16K |
| 代理商： | MRF150 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
V(BR)DSS
ID = 100 mA
VGS = 0 V
125
V
IDSS
VDSS = 50 V
VGS = 0 V
5.0
mA
IGSS
VGS = 20 V
VDS = 0 V
1.0
A
VGS(th)
VDS = 10 V
ID = 100 mA
1.0
5.0
V
gfs
VDS = 10 V
ID = 100 mA
4
mho
Ciss
Coss
Crss
VDS = 50 V
VGS = 0 V
f = 1.0 MHz
350
250
50
pF
Gps
ηηηη
VDD = 50 V
IDQ = 250 mA
Pout = 150 W (PEP)
Fo = 30 & 30.001 MHz
45
17.0
50
dB
%
ψ
VSWR = 30:1 AT ALL PHASE ANGLES
NO DEGRADRADATION IN OUTPUT POWER
SILICON RF POWER MOSFET
MRF150
DESCRIPTION:
The
MRF150 is an N-Channel
Enhancement-Mode MOS Broadband
RF Ppwer Transistor Designed for
Wideband Large Signal Amplifier
Applications From 2.0 to 150 MHz.
MAXIMUM RATINGS
ID
16 A
VDSS
125 V
VGS
± 40 V
PDISS
300 W @ TC = 25
OC
TJ
-65
OC to +200 OC
TSTG
-65
OC to +150 OC
θθθθ
JC
10
OC/W
PACKAGE STYLE .500 4L FLG
MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.980 / 24.89
.7.30 / 18.54
inches / mm
.230 / 5.84
H
.003 / 0.08
.007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
I
K
J
.112x45°
FULL R
C
E
B
G
D
F
A
L
.125 NOM.
.125 / 3.18
.495 / 12.57
.505 / 12.83
.280 / 7.11
D
G
S
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