參數(shù)資料
型號(hào)： MRF134
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CASE 211-07, 4 PIN
文件頁(yè)數(shù)： 5/10頁(yè)
文件大?。?/td> 208K
代理商： MRF134
Figure 8. Output Power versus Gate Voltage
Figure 9. Drain Current versus Gate Voltage
(Transfer Characteristics)
Figure 10. Gate–Source Voltage versus
Case Temperature
Figure 11. Maximum Available Gain
versus Frequency
Figure 12. Capacitance versus Voltage
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
6
5
4
3
2
0
-2
0
VGS, GATE-SOURCE VOLTAGE (VOLTS)
P
,OUTPUT
POWER
(W
ATTS)
out
1
-1
12
3
4
5
I D
,DRAIN
CURRENT
(MILLAMPS)
500
0
VGS, GATE-SOURCE VOLTAGE (VOLTS)
12
3
4
5
400
300
200
100
67
8
1.02
-25
TC, CASE TEMPERATURE (°C)
0
25
50
75
100
125
150
1
0.98
0.96
0.94
0.92
0.9
V GS
,GA
TESOURCE
VOL
TAGE
(NORMALIZED)
G
MAX
,MAXIMUM
AV
AILABLE
GAIN
(dB)
C,
CAP
ACIT
ANCE
(pF)
I D
,DRAIN
CURRENT
(AMPS)
50
f, FREQUENCY (MHz)
1
10
100
1000
40
30
20
10
0
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
0
28
24
20
16
12
8
4
0
4
8
12
16
20
24
28
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
1
2
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
5
10
20
50 70 100
VDD = 28 V
IDQ = 50 mA
Pin = CONSTANT
f = 400 MHz
150 MHz
TYPICAL DEVICE SHOWN,
VGS(th) = 3.5 V
VDS = 10 V
TYPICAL DEVICE SHOWN,
VGS(th) = 3.5 V
VDD = 28 V
IDQ = 200 mA
100 mA
50 mA
GMAX =
|S21|2
(1 - |S11|2) (1 - |S22|2)
VDS = 28 V
ID = 100 mAdc
VGS = 0 V
f = 1 MHz
Coss
Ciss
Crss
TC = 25°C
0
4
REV 6
相關(guān)PDF資料
PDF描述
MRF141G VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF141 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF148A VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF1500 L BAND, Si, NPN, RF POWER TRANSISTOR
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參數(shù)描述
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