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參數(shù)資料
| 型號： | MRF134 |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 211-07, 4 PIN |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 208K |
| 代理商： | MRF134 |
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 5.0 mA)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0)
IDSS
—
1.0
mAdc
Gate–Source Leakage Current (VGS = 20 V, VDS = 0)
IGSS
—
1.0
Adc
ON CHARACTERISTICS
Gate Threshold Voltage (ID = 10 mA, VDS = 10 V)
VGS(th)
1.0
3.5
6.0
Vdc
Forward Transconductance (VDS = 10 V, ID = 100 mA)
gfs
80
110
—
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
—
7.0
—
pF
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Coss
—
9.7
—
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Crss
—
2.3
—
pF
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDS = 28 Vdc, ID = 200 mA, f = 150 MHz)
NF
—
2.0
—
dB
Common Source Power Gain
(VDD = 28 Vdc, Pout = 5.0 W, IDQ = 50 mA)
f = 150 MHz (Fig. 1)
f = 400 MHz (Fig. 14)
Gps
11
—
14
10.6
—
dB
Drain Efficiency (Fig. 1)
(VDD = 28 Vdc, Pout = 5.0 W, f = 150 MHz, IDQ = 50 mA)
η
50
55
—
%
Electrical Ruggedness (Fig. 1)
(VDD = 28 Vdc, Pout = 5.0 W, f = 150 MHz, IDQ = 50 mA,
VSWR 30:1 at all Phase Angles)
ψ
No Degradation in Output Power
Figure 1. 150 MHz Test Circuit
C1, C4 — Arco 406, 15–115 pF
C2 — Arco 403, 3.0–35 pF
C3 — Arco 402, 1.5–20 pF
C5, C6, C7, C8, C12 — 0.1
F Erie Redcap
C9 — 10
F, 50 V
C10, C11 — 680 pF Feedthru
D1 — 1N5925A Motorola Zener
L1 — 3 Turns, 0.310
″ ID, #18 AWG Enamel, 0.2″ Long
L2 — 3–1/2 Turns, 0.310
″ ID, #18 AWG Enamel, 0.25″ Long
L3 — 20 Turns, #20 AWG Enamel Wound on R5
L4 — Ferroxcube VK–200 — 19/4B
R1 — 68
, 1.0 W Thin Film
R2 — 10 k
, 1/4 W
R3 — 10 Turns, 10 k
Beckman Instruments 8108
R4 — 1.8 k
, 1/2 W
R5 — 1.0 M
, 2.0 W Carbon
Board — G10, 62 mils
R3*
R4
L4
L3
L1
L2
D1
C8
C9
C10
C11
C12
C4
C3
C6
C5
R2
C2
C1
RF INPUT
RF OUTPUT
+VDD = 28 V
DUT
R5
+
-
C7
R1
*Bias Adjust
2
REV 6
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF134-39 | 制造商:ASI 制造商全稱:ASI 功能描述:VHF POWER MOSFET |
| MRF136 | 功能描述:射頻MOSFET電源晶體管 5-400MHz 15Watts 28Volt Gain 16dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF136MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET 制造商:M/A-COM Technology Solutions 功能描述:MRF136MP |
| MRF136Y | 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 65V 5A 2PIN CASE 319B-02 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET 制造商:M/A-COM Technology Solutions 功能描述:Trans RF MOSFET N-CH 65V 5A 5-Pin Case 319B-02 |
| MRF137 | 功能描述:射頻MOSFET電源晶體管 5-400MHz 30Watts 28Volt Gain 13dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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