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參數(shù)資料
| 型號(hào)： | MRF148A |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 211-07, 4 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 169K |
| 代理商： | MRF148A |
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode
Designed for power amplifier applications in industrial, commercial and
amateur radio equipment to 175 MHz.
Superior High Order IMD
Specified 50 Volts, 30 MHz Characteristics
Output Power = 30 Watts
Power Gain = 18 dB (Typ)
Efficiency = 40% (Typ)
IMD(d3) (30 W PEP) — –35 dB (Typ)
IMD(d11) (30 W PEP) — –60 dB (Typ)
100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR
Lower Reverse Transfer Capacitance (3.0 pF Typical)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
120
Vdc
Drain–Gate Voltage
VDGO
120
Vdc
Gate–Source Voltage
VGS
±40
Vdc
Drain Current — Continuous
ID
6.0
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
115
0.66
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.52
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF148A
30 W, to 175 MHz
N–CHANNEL MOS
LINEAR RF POWER
FET
CASE 211–07, STYLE 2
D
G
S
Order this document
by MRF148/D
SEMICONDUCTOR TECHNICAL DATA
1
Replaces MRF148/D
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相關(guān)代理商/技術(shù)參數(shù) |
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