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參數(shù)資料
| 型號： | MRF1035MB |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.280 INCH, PILL, 4 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 13K |
| 代理商： | MRF1035MB |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 20 mA
60
V
BVCES
IC = 20 mA
60
V
BVEBO
IE = 2.0 mA
4.0
V
ICBO
VCE = 50 V
2.0
mA
hFE
VCE = 5.0 V
IC = 500 mA
10
100
---
Cob
VCB = 50 V
f = 1.0 MHz
10
15
pF
PG
ηηηη
C
VCC = 50 V
POUT = 35 W
f = 1090 MHz
10
30
12.4
34
dB
%
NPN SILICON RF POWER TRANSISTOR
MRF1035MB
DESCRIPTION:
The
ASI MRF1035MB is Designed
for Class C, DME/TACAN Applications
up to 1090 MHz.
FEATURES:
Internal Input Matching Network
P
G = 10 dB at 35 W/1090 MHz
Omnigold Metalization System
MAXIMUM RATINGS
IC
2.0 A
VCBO
60 V
VCES
60 V
PDISS
35 W PEAK
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θθθθ
JC
5.0 °C/W
PACKAGE STYLE .280 4L PILL (A)
MINIMUM
inches / mm
.004 / 0.10
1.000 / 25.40
.050 / 1.27
B
C
D
E
F
A
MAXIMUM
.065 / 1.65
.145 / 3.68
.007 / 0.18
inches / mm
.205 / 5.21
DIM
.095 / 2.41
.105 / 2.67
F
E
A
.100x45°
D
B
C
G
.275 / 6.99
.285 / 7.21
.195 / 4.95
C
B
E
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