參數(shù)資料
型號: MRF10150
元件分類: 功率晶體管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: HERMETIC SEALED, CASE 376B-02, 2 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 139K
代理商: MRF10150
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0)
V(BR)CES
65
Vdc
Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0)
V(BR)CBO
65
Vdc
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
3.5
Vdc
Collector Cutoff Current (VCB = 36 Vdc, IE = 0)
ICBO
25
mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE
20
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, Pout = 150 W Peak, f = 1090 MHz)
GPB
9.5
10
dB
Collector Efficiency
(VCC = 50 Vdc, Pout = 150 W Peak, f = 1090 MHz)
η
40
%
Load Mismatch
(VCC = 50 Vdc, Pout = 150 W Peak, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
ψ
No Degradation in Output Power
Figure 1. Test Circuit
.15
.625
.275
1.751
.787
.081
.37
.583
1.803
.522
.081
1.383
.081
0.943
.489
1.0
.081
Z5
Z1
Z2
Z3
Z4
Z6
Z7
Z8
Z9
D.U.T.
RF
INPUT
RF
OUTPUT
+
-
+
C2
C3
C4
L1
C1
C1 — 82 pF 100 Mil Chip Capacitor
C2 — 39 pF 100 Mil Chip Capacitor
C3 — 0.1
F
C4 — 100
F, 100 Vdc, Electrolytic
L1 — 3 Turns #18 AWG, 1/8
″ ID, 0.18 Long
Z1–Z9 — Microstrip, See Details
Board Material — Teflon Glass Laminate
Dielectric Thickness = 0.030
εr = 2.55, 2 Oz. Copper
.363
.334
.34
.173
.09
.625
.39
.081
.100
2
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