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參數(shù)資料
| 型號(hào)： | MRA10007L |
| 廠商： | Motorola, Inc. |
| 英文描述： | RECTIFIER,1A,400V,SM |
| 中文描述： | 超高頻功率晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 50K |
| 代理商： | MRA10007L |
1
MRA1000–7L
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed primarily for wideband, large–signal output and driver amplifier
stages to 1000 MHz.
Designed for Class A Linear Power Amplifiers
Specified 19 Volt, 1000 MHz Characteristics:
Output Power — 7.0 Watts
Power Gain — 9.0 dB Min, Small–Signal
Built–In Matching Network for Broadband Operation
Gold Metallization for Improved Reliability
Diffused Ballast Resistors
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
VCEO
VCBO
VEBO
PD
Value
28
50
3.5
42
0.25
Unit
Vdc
Vdc
Vdc
Watts
W/
°
C
°
C
°
C
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
TJ
Tstg
200
–65 to +150
Characteristic
Symbol
R
θ
JC
Max
4.0
Unit
°
C/W
Thermal Resistance, Junction to Case (TC = 70
°
C)
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE = 0)
Collector–Base Breakdown Voltage (IC = 20 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 5.0 mA, IC = 0)
Collector Cutoff Current (VCB = 19 V, IE = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 A, VCE = 5.0 V)
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 24 V, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Common–Emitter Amplifier Small–Signal Gain
(VCE = 19 V, f = 1.0 GHz, IC = 1.2 A)
Load Mismatch
(VCE = 19 V, IC = 1.2 A, Pout = 7.0 W, f = 1.0 GHz,
Load VSWR =
∞
:1, All Phase Angles)
Overdrive (VCE = 19 V, IC = 1.2 A, f = 1.0 GHz)
(No degradation)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
28
—
—
Vdc
50
—
—
Vdc
50
—
—
Vdc
3.5
—
—
Vdc
—
—
15
mAdc
hFE
20
—
90
—
Cob
—
—
22
pF
GSS
9.0
10
—
dB
ψ
No Degradation in Output Power
Pinover
—
—
3.5
W
Output Power, 1.0 dB Compression Point
(VCE = 19 V, f = 1.0 GHz, IC = 1.2 A)
Po1 dB
7.0
—
—
W
Order this document
by MRA1000–7L/D
SEMICONDUCTOR TECHNICAL DATA
9.0 dB, TO 1000 MHz
7.0 WATTS BROADBAND
UHF POWER TRANSISTOR
CASE 145D–02, STYLE 1
(.380 SOE)
REV 6
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