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MRF1030
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed primarily for wideband, large–signal output and driver amplifier
stages to 1.0 GHz.
Designed for Class A Linear Power Amplifiers
Specified 25 Volt, 900 MHz Characteristics:
Output Power — 3.0 Watts
Power Gain — 7.5 dB Min, Class AB
Gold Metallization for Improved Reliability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
PD
30
Vdc
Collector–Base Voltage
60
Vdc
Emitter–Base Voltage
4.0
Vdc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
29
0.167
Watts
W/
°
C
Operating Junction Temperature
TJ
Tstg
200
°
C
Storage Temperature Range
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (TC = 70
°
C)
ELECTRICAL CHARACTERISTICS
R
θ
JC
6.0
°
C/W
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 15 mA, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 15 mA, VBE = 0)
Collector–Base Breakdown Voltage
(IC = 15 mA, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 5.0 mA, IC = 0)
Collector Cutoff Current
(VCB = 25 V, IE = 0)
V(BR)CEO
30
—
—
Vdc
V(BR)CES
60
—
—
Vdc
V(BR)CBO
60
—
—
Vdc
V(BR)EBO
4.0
—
—
Vdc
ICBO
—
—
2.0
mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 500 mA, VCE = 5.0 V)
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 28 V, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCE = 25 V, Pout = 3.0 W, f = 900 MHz, IC = 0.4 A)
Load Mismatch
(VCE = 25 V, IC = 0.4 A, Pout = 3.0 W, f = 900 MHz,
Load VSWR =
∞
:1, All Phase Angles)
hFE
20
—
80
—
Cob
—
—
9.8
pF
GPE
7.5
8.5
—
dB
ψ
No Degradation in Output Power
Order this document
by MRF1030/D
SEMICONDUCTOR TECHNICAL DATA
3.0 W, TO 1.0 GHz
LINEAR
UHF POWER TRANSISTOR
NPN SILICON
CASE 244–04, STYLE 1
(.280 SOE)
REV 6