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參數(shù)資料
| 型號(hào)： | MRF10070 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | MICROWAVE POWER TRANSISTOR |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 97K |
| 代理商： | MRF10070 |
1
MRF10070
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
Designed for 1025–1150 MHz pulse common base amplifier applications
such as TCAS, TACAN and Mode–S transmitters.
Guaranteed Performance @ 1090 MHz
Output Power = 70 Watts Peak
Gain = 9.0 dB Min
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Characterized with 10
μ
s, 10% Duty Cycle Pulses
Silicon Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input and Output Matching
Hermetically Sealed Package
Recommended Driver for MRF10500 Transistor or a Pair of MRF10350
Transistors
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCBO
VEBO
IC
PD
65
Vdc
Collector–Base Voltage
65
Vdc
Emitter–Base Voltage
3.5
Vdc
Collector Current — Peak (1)
8.8
Adc
Total Device Dissipation @ TC = 25
°
C (1), (2)
Derate above 25
°
C
438
2.5
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
– 65 to + 200
°
C
Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (3)
R
θ
JC
0.4
°
C/W
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case
θ
JC value
measured @ 10
μ
s, 10%.)
Order this document
by MRF10070/D
SEMICONDUCTOR TECHNICAL DATA
70 W (PEAK)
1025 –1150 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 376C–01, STYLE 1
REV 6
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