參數(shù)資料
型號(hào)： MR4A08ACYS35
廠商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
中文描述： 64K的x 16位的3.3V異步磁阻隨機(jī)存取內(nèi)存
文件頁(yè)數(shù)： 4/20頁(yè)
文件大?。?/td> 148K
代理商： MR4A08ACYS35
MR0A16A Advanced Information Data Sheet, Rev. 0
4
Freescale Semiconductor
Electrical Specifications
Table 3. Absolute Maximum Ratings
1
Parameter
Symbol
V
DD
V
In
I
Out
P
D
Value
–0.5 to 4.0
–0.5 to V
DD
+ 0.5
±
20
0.600
Unit
V
V
mA
W
Supply voltage
2
Voltage on any pin
2
Output current per pin
Package power dissipation
3
Temperature under bias
MR0A16AYS35 (Commercial)
MR0A16ACYS35 (Industrial)
MR0A16AVYS35 (Extended)
Storage temperature
Lead temperature during solder (3 minute max)
Maximum magnetic field during write
MR0A16AYS35 (Commercial)
MR0A16ACYS35 (Industrial)
MR0A16AVYS35 (Extended)
Maximum magnetic field during read or standby
MR0A16AYS35 (Commercial)
MR0A16ACYS35 (Industrial)
MR0A16AVYS35 (Extended)
T
Bias
–10 to 85
–45 to 95
–45 to 110
–55 to 150
260
C
T
stg
T
Lead
C
C
H
max_write
15
25
25
Oe
H
max_read
100
100
100
Oe
NOTES:
1
Permanent device damage may occur if absolute maximum ratings are exceeded. Functional operation
should be restricted to recommended operating conditions. Exposure to excessive voltages or magnetic
fields could affect device reliability.
All voltages are referenced to V
SS
.
Power dissipation capability depends on package characteristics and use environment.
2
3
Table 4. Operating Conditions
Parameter
Symbol
V
DD
V
WI
Min
3.0
1
2.5
Typ
3.3
2.7
Max
3.6
3.0
1
V
DD
+
0.3
2
0.8
Unit
V
V
Power supply voltage
Write inhibit voltage
Input high voltage
V
IH
2.2
—
V
Input low voltage
Operating temperature
MR0A16AYS35 (Commercial)
MR0A16ACYS35 (Industrial)
MR0A16AVYS35 (Extended)
V
IL
–0.5
3
—
V
T
A
0
-40
-40
70
85
105
C
NOTES:
1
After power up or if V
DD
falls below V
WI
, a waiting period of 2 ms must be observed, and E and W
must remain high for 2 ms. Memory is designed to prevent writing for all input pin conditions if V
DD
falls below minimum V
WI
.
V
IH
(max) = V
DD
+ 0.3 Vdc; V
IH
(max) = V
DD
+ 2.0 Vac (pulse width
≤
10 ns) for I
≤
20.0 mA.
V
IL
(min) = –0.5 Vdc; V
IL
(min) = –2.0 Vac (pulse width
≤
10 ns) for I
≤
20.0 mA.
2
3
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MR4A08AVTS35C 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR4A08AVYS35 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR4A08AYS35 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR4A08BCMA35 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
MR4A08BCMA35R 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
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