參數(shù)資料
型號: MR4A08ACYS35
廠商: 飛思卡爾半導體(中國)有限公司
英文描述: 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
中文描述: 64K的x 16位的3.3V異步磁阻隨機存取內(nèi)存
文件頁數(shù): 3/20頁
文件大?。?/td> 148K
代理商: MR4A08ACYS35
Electrical Specifications
MR0A16A Advanced Information Data Sheet, Rev. 0
Freescale Semiconductor
3
Electrical Specifications
Absolute Maximum Ratings
This device contains circuitry to protect the inputs against damage caused by high static voltages or
electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage
greater than maximum rated voltages to these high-impedance (Hi-Z) circuits.
The device also contains protection against external magnetic fields. Precautions should be taken to
avoid application of any magnetic field more intense than the maximum field intensity specified in the
maximum ratings.
Table 2. Operating Modes
E
1
G
1
W
1
LB
1
UB
1
Mode
V
DD
Current
I
SB1
, I
SB2
I
DDA
I
DDA
I
DDA
I
DDA
I
DDA
I
DDA
I
DDA
I
DDA
DQL[7:0]
2
DQU[15:8]
2
H
L
L
L
L
L
L
L
L
X
H
X
L
L
L
X
X
X
X
H
X
H
H
H
L
L
L
X
X
H
L
H
L
L
H
L
X
X
H
H
L
L
H
L
L
Not selected
Output disabled
Output disabled
Lower byte read
Upper byte read
Word read
Lower byte write
Upper byte write
Word write
Hi-Z
Hi-Z
Hi-Z
D
Out
Hi-Z
D
Out
D
In
Hi-Z
D
In
Hi-Z
Hi-Z
Hi-Z
Hi-Z
D
Out
D
Out
Hi-Z
D
In
D
In
NOTES:
1
H = high, L = low, X = don’t care
Hi-Z = high impedance
2
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