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參數(shù)資料
| 型號： | MPSW55RLRAG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226 |
| 封裝： | LEAD FREE, CASE 29-10, TO-92, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 97K |
| 代理商： | MPSW55RLRAG |
Semiconductor Components Industries, LLC, 2010
August, 2010 Rev. 4
1
Publication Order Number:
MPSW55/D
MPSW55, MPSW56
One Watt Amplifier
Transistors
PNP Silicon
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
MPSW55
MPSW56
VCEO
60
80
Vdc
CollectorBase Voltage
MPSW55
MPSW56
VCBO
60
80
Vdc
EmitterBase Voltage
VEBO
4.0
Vdc
Collector Current Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
8.0
W
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5
20
W
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
RqJA
125
°C/W
Thermal Resistance, JunctiontoCase
RqJC
50
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MPSW56RLRP
TO92
2000/Ammo Pack
MPSW56RLRPG
TO92
(PbFree)
2000/Ammo Pack
MPSW55RLRAG
TO92
(PbFree)
2000/Tape & Reel
Device
Package
Shipping
MPSW55G
TO92
(PbFree)
5000 Units/Bulk
ORDERING INFORMATION
x
= 5 or 6
A
= Assembly Location
Y
= Year
WW = Work Week
G
= PbFree Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
MPS
W5x
AYWW G
G
COLLECTOR
3
2
BASE
1
EMITTER
1 2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO92 1 WATT
(TO226)
CASE 2910
STYLE 1
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MPSW56 | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW56_D26Z | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW56_Q | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW56RLRA | 功能描述:兩極晶體管 - BJT 500mA 80V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW56RLRAG | 功能描述:兩極晶體管 - BJT 500mA 80V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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