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參數(shù)資料
| 型號(hào)： | MP6K31TR |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 60 V, 0.35 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MPT6, 6 PIN |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 421K |
| 代理商： | MP6K31TR |
Data Sheet
www.rohm.com
20
10 ROHM Co., Ltd. All rights reserved.
MP6K31
0.01
0.1
1
10
0.01
0.1
1
10
F
orw
ard
T
ransfer
A
dm
ittance
Y
fs
[S
]
Drain Current : ID [A]
Forward Transfer Admittance vs. Drain Current
VDS=10V
pulsed
Ta=-25℃
Ta=25℃
Ta=75℃
Ta=125℃
0.001
0.01
0.1
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Drai
n
Currnt
:
I
D
[A
]
Gate-Source Voltage : VGS [V]
Typical Transfer Characteristics
VDS=10V
pulsed
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
1
10
Is
[A
]
Source Current vs. Source-Drain Voltage
VGS=0V
pulsed
Ta=125℃
T =75℃
400
500
600
tate
R
e
si
stance
]
Static Drain-Source On-State Resistance vs.
Gate-Source Voltage
Ta=25℃
pulsed
ID=2.0A
ID=1.0A
0.01
0.1
0.0
0.5
1.0
1.5
2.0
S
ource
C
urrent
:
Source-Drain Voltage : VSD [V]
Ta=75℃
Ta=25℃
Ta=-25℃
0
100
200
300
024
68
10
S
tati
cD
rai
n-S
ource
On-S
t
R
DS
(on)
[m
Gate-Source Voltage : VGS [V]
1
10
100
1000
0.01
0.1
1
10
S
w
itchi
ng
T
im
e
:
t
[ns]
Drain Current : ID [A]
Switching Characteristics
td(on)
tr
td(off)
tf
VDD≒30V
VGS=10V
RG=10
Ta=25℃
Pulsed
0
2
4
6
8
10
0
1
2
3
4
5
Gate-S
ource
V
ol
tage
:V
GS
[V
]
Total Gate Charge : Qg [nC]
Dynamic Input Characteristics
Ta=25℃
VDD=30V
ID=2A
Pulsed
4/6
2010.09 - Rev.A
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