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參數(shù)資料
| 型號： | MP6K31TR |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 60 V, 0.35 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MPT6, 6 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 421K |
| 代理商： | MP6K31TR |
Data Sheet
www.rohm.com
20
10 ROHM Co., Ltd. All rights reserved.
MP6K31
Electrical characteristics (Ta = 25
C)
<It is the same characteristics for Tr1 and Tr2.>
Symbol
Min.
Typ.
Max.
Unit
Gate-source leakage
IGSS
--
10
AVGS=20V, VDS=0V
Drain-source breakdown voltage V (BR)DSS
60
-
V
ID=1mA, VGS=0V
Zero gate voltage drain current
IDSS
--
1
AVDS=60V, VGS=0V
Gate threshold voltage
VGS (th)
1.0
-
2.5
V
VDS=10V, ID=1mA
-
210
290
ID=2A, VGS=10V
-
240
330
ID=2A, VGS=4.5V
-
255
350
ID=2A, VGS=4.0V
Forward transfer admittance
l Yfs l
1.4
-
S
ID=2A, VDS=10V
Input capacitance
Ciss
-
110
-
pF
VDS=10V
Output capacitance
Coss
-
28
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
12
-
pF
f=1MHz
Turn-on delay time
td(on)
-6
-
ns
ID=1A, VDD 30V
Rise time
tr
-
10
-
ns
VGS=10V
Turn-off delay time
td(off)
-
20
-
ns
RL=30
Fall time
tf
-9
-
ns
RG=10
Total gate charge
Qg
-
2.0
-
nC ID=2A, VDD 30V
Gate-source charge
Qgs
-
0.8
-
nC VGS=5V
Gate-drain charge
Qgd
-
0.4
-
nC
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25
C)
<It is the same characteristics for Tr1 and Tr2.>
Symbol
Min.
Typ.
Max. Unit
Forward Voltage
VSD
-
1.2
V
Is=1.2A, VGS=0V
*Pulsed
Conditions
m
Parameter
Static drain-source on-state
resistance
RDS (on)
*
2/6
2010.09 - Rev.A
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