參數(shù)資料
型號: MP6T12TR
元件分類: 小信號晶體管
英文描述: 1000 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: MPT6, 6 PIN
文件頁數(shù): 1/6頁
文件大?。?/td> 372K
代理商: MP6T12TR
www.rohm.com
20
10 ROHM Co., Ltd. All rights reserved.
Midium Power Transistors (-50V / -1A)
MP6T12
Structure
Dimensions (Unit : mm)
PNP Silicon epitaxial planar transistor
Features
1) Low saturation voltage, typically
VCE (sat) = -0.4V (Max.) (IC / IB= -500mA / -25mA)
2) High speed switching
Applications
High Speed Switching
Inner circuit (Unit : mm)
Packaging specifications
Package
MPT6
Code
TR
Basic ordering unit (pieces)
1000
Absolute maximum ratings (Ta = 25
C)
 
<It is the same ratings for the Tr.1 and Tr.2>
Symbol
Limits
Collector-base voltage
VCBO
-50
Collector-emitter voltage
VCEO
-50
Emitter-base voltage
VEBO
-6
IC
-1
ICP
-2
PD
2.0
PD
1.4
Junction temperature
Tj
150
Range of storage temperature
Tstg
-55 to +150
*1 Pw=10ms, Single Pulse
*2 Mounted on a 40 x 40 x 0.7[mm3] ceramic board
V
Unit
Collector current
Pulsed
DC
Parameter
Low Frequency Amplifier
C
W/Element
W/Total
A
Power dissipation
Type
V
(1) Tr.1 Emitter
(2) Tr.1 Base
(3) Tr.2 Collector
(4) Tr.2 Emitter
(5) Tr.2 Base
(6) Tr.1 Collector
MPT6
(1)
(2)
(3)
(6)
(5)
(4)
*1
*2
(1)
(2)
(3)
(4)
(5)
(6)
1/5
2010.07 - Rev.A
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