參數(shù)資料
型號: MP6301
廠商: Toshiba Corporation
英文描述: High Power Switching Applications 3-Phase Motor Drive and Bipolar Drive of Pulse Motor
中文描述: 高功率開關(guān)應(yīng)用三相電機(jī)驅(qū)動(dòng)和雙極步進(jìn)電機(jī)驅(qū)動(dòng)器
文件頁數(shù): 3/4頁
文件大?。?/td> 102K
代理商: MP6301
MP6301
2002-11-20
3
Electrical Characteristics
(Ta = 25°C) (PNP transistor)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
=
100 V, I
E
= 0 A
20
μA
Collector cut-off current
I
CEO
V
CE
=
80 V, I
B
= 0 A
20
μA
Emitter cut-off current
I
EBO
V
EB
=
8 V, I
C
= 0 A
0.8
4.0
mA
Collector-base breakdown voltage
V
(BR) CBO
I
C
=
1 mA, I
E
= 0 A
100
V
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
=
10 mA, I
B
= 0 A
80
V
h
FE (1)
V
CE
=
2 V, I
C
=
1 A
2000
DC current gain
h
FE (2)
V
CE
=
2 V, I
C
=
2 A
1000
Collector-emitter
V
CE (sat)
I
C
=
2 A, I
B
=
4 mA
1.8
Saturation voltage
Base-emitter
V
BE (sat)
I
C
=
2 A, I
B
=
4 mA
2.3
V
Transition frequency
f
T
V
CE
=
2 V, I
C
=
0.5 A
50
MHz
Collector output capacitance
C
ob
V
CB
=
10 V, I
E
= 0 A, f = 1 MHz
30
pF
Turn-on time
t
on
0.4
Storage time
t
stg
1.8
Switching time
Fall time
t
f
I
B1
= I
B2
= 4 mA, duty cycle
1%
0.4
μs
Emitter-Collector Diode Ratings and Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward current
I
FM
3
A
Surge current
I
FSM
t = 1 s, 1 shot
5
A
Forward voltage
V
F
I
F
= 1 A, I
B
= 0 A
2.0
V
Reverse recovery time
t
rr
500
μs
Reverse recovery charge
Q
rr
I
F
= 3 A, V
BE
= 3 V, dI
F
/dt =
50 A/μs
2.7
μC
I
B
20 μs
V
CC
=
30 V
Output
1
I
B1
I
B2
Input
I
B
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