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參數(shù)資料
| 型號： | MP6301 |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Power Switching Applications 3-Phase Motor Drive and Bipolar Drive of Pulse Motor |
| 中文描述： | 高功率開關(guān)應(yīng)用三相電機驅(qū)動和雙極步進電機驅(qū)動器 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 102K |
| 代理商： | MP6301 |
MP6301
2002-11-20
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance of junction to
ambient
(6 devices operation, Ta = 25°C)
Σ
R
th (j-a)
28.4
°C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
T
L
260
°C
Electrical Characteristics
(Ta = 25°C) (NPN transistor)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= 100 V, I
E
= 0 A
―
―
20
μA
Collector cut-off current
I
CEO
V
CE
= 80 V, I
B
= 0 A
―
―
20
μA
Emitter cut-off current
I
EBO
V
EB
= 8 V, I
C
= 0 A
0.8
―
4.0
mA
Collector-base breakdown voltage
V
(BR) CBO
I
C
= 1 mA, I
E
= 0 A
100
―
―
V
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
= 10 mA, I
B
= 0 A
80
―
―
V
h
FE (1)
V
CE
= 2 V, I
C
= 1 A
2000
―
―
DC current gain
h
FE (2)
V
CE
= 2 V, I
C
= 2 A
1000
―
―
―
Collector-emitter
V
CE (sat)
I
C
= 2 A, I
B
= 4 mA
―
―
1.8
Saturation voltage
Base-emitter
V
BE (sat)
I
C
= 2 mA, I
B
= 4 mA
―
―
2.3
V
Transition frequency
f
T
V
CE
= 2 V, I
C
= 0.5 A
―
100
―
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0 A, f = 1 MHz
―
20
―
pF
Turn-on time
t
on
―
0.4
―
Storage time
t
stg
―
3.0
―
Switching time
Fall time
t
f
I
B1
=
I
B2
= 4 mA, duty cycle
≤
1%
―
0.6
―
μs
Emitter-Collector Diode Ratings and Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward current
I
FM
―
―
―
3
A
Surge current
I
FSM
t = 1 s, 1 shot
―
―
5
A
Forward voltage
V
F
I
F
= 1 A, I
B
= 0 A
―
―
2.0
V
Reverse recovery time
t
rr
―
1
―
μs
Reverse recovery charge
Q
rr
I
F
= 3 A, V
BE
=
3 V, dI
F
/dt =
50 A/μs
―
5
―
μC
I
B
20 μs
V
CC
= 30 V
Output
1
I
B2
I
B1
Input
I
B
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