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參數(shù)資料
| 型號： | MMSF7N03HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 8.2 A, 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 255K |
| 代理商： | MMSF7N03HDR2 |
MMSF7N03HD
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
30
41
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
0.02
1.0
10
Adc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
1.0
1.5
4.0
2.0
Vdc
mV/
°C
Static DrainSource OnResistance
(VGS = 10 Vdc, ID = 7.0 Adc)
(VGS = 4.5 Vdc, ID = 3.5 Adc)
RDS(on)
0.023
0.029
0.028
0.040
Ohms
Forward Transconductance (VDS = 3 Vdc, ID = 2.5 Adc)
gFS
3.0
12
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
24 Vd
V
0Vd
Ciss
931
1190
pF
Output Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
371
490
Transfer Capacitance
f = 1.0 MHz)
Crss
89
120
SWITCHING CHARACTERISTICS (Note 3.)
TurnOn Delay Time
td(on)
15
30
ns
Rise Time
(VDD = 10 Vdc, ID = 5.0 Adc,
VGS =45Vdc
tr
93
185
TurnOff Delay Time
VGS = 4.5 Vdc,
RG = 9.1 )
td(off)
35
70
Fall Time
RG
9.1
)
tf
40
80
TurnOn Delay Time
td(on)
9.0
Rise Time
(VDD = 10 Vdc, ID = 5.0 Adc,
VGS =10Vdc
tr
53
TurnOff Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
56
Fall Time
RG
9.1
)
tf
39
Gate Charge
SFi
8
QT
30
43
nC
See Figure 8
(VDS = 16 Vdc, ID = 5.0 Adc,
Q1
3.0
(VDS
16 Vdc, ID
5.0 Adc,
VGS = 10 Vdc)
Q2
7.5
Q3
6.0
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 2.)
(IS = 7.0 Adc, VGS = 0 Vdc)
(IS = 7.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
0.82
0.69
1.0
Vdc
Reverse Recovery Time
SFi
15
trr
32
ns
See Figure 15
(IS = 7.0 Adc, VGS = 0 Vdc,
ta
24
(IS
7.0 Adc, VGS
0 Vdc,
dIS/dt = 100 A/s)
tb
8.0
Reverse Recovery Stored Charge
QRR
0.045
C
2. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMSF7N03Z | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 7.5 AMPERES 30 VOLTS |
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| MMSF7P03HDR2 | 功能描述:MOSFET 30V 7A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMSF7P03HDR2G | 功能描述:MOSFET PFET SO8S 30V 7A 35mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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