參數(shù)資料
型號: MMSF7N03HDR2
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: 8.2 A, 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁數(shù): 10/12頁
文件大?。?/td> 255K
代理商: MMSF7N03HDR2
MMSF7N03HD
http://onsemi.com
7
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
A
V
ALANCHE
ENERGY
(mJ)
40
25
50
75
100
125
200
ID = 9 A
I pk = 9 A
L = 4 mH
360
150
0
0.1
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
1
10
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
VGS = 10 V
SINGLE PULSE
TC = 25°C
10
0.1
dc
10 ms
1
100
Mounted on 2
″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″
thick single sided), 10s max.
1 ms
100
s
10
s
80
240
400
120
280
440
160
320
480
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 14. Thermal Response
Figure 15. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
t, TIME (s)
Rthja(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
1
0.1
0.01
D = 0.5
SINGLE PULSE
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
0.2
0.1
0.05
0.02
0.01
1.0E+02
1.0E+03
0.001
10
0.0163
0.0652
0.1988
0.6411
0.9502
72.416 F
1.9437 F
0.5541 F
0.1668 F
0.0307 F
Chip
Ambient
Normalized to θja at 10s.
相關(guān)PDF資料
PDF描述
MMSF7N03ZR2 7.5 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
MMUN2113LT3G 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMUN2134LT1G 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMUN2131LT1G 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMUN2130LT1G 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMSF7N03Z 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 7.5 AMPERES 30 VOLTS
MMSF7N03ZR2 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述:
MMSF7P03HD 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 7 A, 30 V, P−Channel SO−8
MMSF7P03HDR2 功能描述:MOSFET 30V 7A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MMSF7P03HDR2G 功能描述:MOSFET PFET SO8S 30V 7A 35mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube