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參數(shù)資料
| 型號(hào)： | MMSF5N03HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 6.5 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MINIATURE, CASE 751-07, SOP-8 |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大小： | 262K |
| 代理商： | MMSF5N03HDR2 |
MMSF5N03HD
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
0.2
0.4
0.6
0.8
2
0
4
6
10
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
2
2.2
2.4
2.6
2.8
3.8
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
01
2
3
4
10
0.12
0.16
0.2
02
4
6
8
10
0.03
0.0375
0.0425
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 3. OnResistance versus
GateToSource Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
0.6
1
1.2
1.4
1.6
1
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VDS ≥ 10 V
TJ = 100°C
25
°C
55
°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
VGS = 4.5 V
VGS = 10 V
ID = 5 A
1
1.2
4.5 V
3.8 V
3.1 V
2.4 V
3
1.4
1.6
1.8
3.2
3.4
3.6
0.08
56
78
9
10 V
50
25
0
25
50
75
100
125
150
TJ = 125°C
8
0.04
0.035
2
0
0.8
010
20
30
4
6
10
8
2
0.04
0.0325
10
100
°C
25
°C
ID = 2.5 A
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| MMSF5P02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 8.7 AMPERES 20 VOLTS |
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| MMSF7N03HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: |
| MMSF7N03Z | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 7.5 AMPERES 30 VOLTS |
| MMSF7N03ZR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
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