參數(shù)資料
型號(hào)： MMSS8050-L
廠商： MICRO COMMERCIAL COMPONENTS
元件分類： 小信號(hào)晶體管
英文描述： 1500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 1/2頁
文件大?。?/td> 334K
代理商： MMSS8050-L
MMSS8050
Features
SOT-23 Plastic-Encapsulate Transistors
Capable of 0.625Watts(Tamb=25
OC) of Power Dissipation.
Collector-current 1.5A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55
OC to +150OC
Marking : Y1
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
40
---
Vdc
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=0.1mAdc, IB=0)
25
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
5.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=40Vdc, IE=0)
---
0.1
uAdc
ICEO
Collector Cutoff Current
(VCE=20Vdc, IB=0)
---
0.1
uAdc
IEBO
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
---
0.1
uAdc
ON CHARACTERISTICS
hFE(1)
DC Current Gain
(IC=100mAdc, VCE=1.0Vdc)
120
350
---
hFE(2)
DC Current Gain
(IC=800mAdc, VCE=1.0Vdc)
40
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=800mAdc, IB=80mAdc)
---
0.5
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=800mAdc, IB=80mAdc)
---
1.2
Vdc
VEB
Base- Emitter Voltage
(IE=1.5Adc)
---
1.6
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
(IC=50mAdc, VCE=10Vdc, f=30MHz)
100
---
MHz
CLASSIFICATION OF HFE(1)
Rank
L
H
Range
120-200
200-350
NPN Silicon
Plastic-Encapsulate
Transistor
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
A
B
C
D
E
G
H
J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
F
omponents
20736 Marilla
Street Chatsworth
!"#
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MCC
Revision: 3
2006/05/13
TM
Micro Commercial Components
E
B
C
www.mccsemi.com
1 of 2
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
相關(guān)PDF資料
PDF描述
MMSS8050 1500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMSS8050-TP 1500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMSS8550-L-TP 1500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MMSS8550-H-TP 1500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MMSS8550-TP 1500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMSS8050-L_13 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:NPN Silicon Plastic-Encapsulate Transistor Collector-base Voltage 40V
MMSS8050-L-TP 功能描述:兩極晶體管 - BJT 625mW, 25V, 1500mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMSS8550-H 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:PNP Silicon Plastic-Encapsulate Transistor
MMSS8550-H-TP 功能描述:兩極晶體管 - BJT 625mW, 25V, 1500mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMSS8550H-TP 制造商:Micro Commercial Components (MCC) 功能描述:PNP Silicon Plastic Encpsulate Transistor
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