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參數(shù)資料
| 型號(hào)： | MMSF5N03HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 6.5 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MINIATURE, CASE 751-07, SOP-8 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 262K |
| 代理商： | MMSF5N03HDR2 |
MMSF5N03HD
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
34
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
10
μAdc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Temperature Coefficient (Negative)
VGS(th)
1.0
2.0
5.0
3.0
Vdc
mV/°C
Static DrainSource OnResistance
(VGS = 10 Vdc, ID = 5.0 Adc)
(VGS = 4.5 Vdc, ID = 2.5 Adc)
RDS(on)
0.033
0.04
0.040
0.050
Ohms
Forward Transconductance (VDS = 3 Vdc, ID = 2.5 Adc)
gFS
3.0
8.0
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
1207
1680
pF
Output Capacitance
Coss
354
490
Transfer Capacitance
Crss
62
120
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
(VDD = 15 Vdc, ID = 5.0 Adc,
VGS = 4.5 Vdc,
RG = 9.1 Ω)
td(on)
20
40
ns
Rise Time
tr
108
216
TurnOff Delay Time
td(off)
36
72
Fall Time
tf
37
74
TurnOn Delay Time
(VDD = 15 Vdc, ID = 5.0 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
11
22
Rise Time
tr
36
72
TurnOff Delay Time
td(off)
68
136
Fall Time
tf
38
76
Gate Charge
See Figure 8
(VDS = 24 Vdc, ID = 5.0 Adc,
VGS = 10 Vdc)
QT
15.2
21
nC
Q1
3.4
Q2
6.6
Q3
5.6
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1)
(IS = 5 Adc, VGS = 0 Vdc)
(IS = 5 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.88
0.77
1.3
Vdc
Reverse Recovery Time
See Figure 15
(IS = 5.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
33
ns
ta
21
tb
12
Reverse Recovery Stored Charge
QRR
0.037
μC
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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