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參數(shù)資料
| 型號： | MMSF3PO3HD |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS P-CHANNEL FIELD EFFECT TRANSISTORS |
| 中文描述： | TMOS是P溝道場效應晶體管 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 329K |
| 代理商： | MMSF3PO3HD |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
0
3
4
6
1
5
2
0
0.4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0.8
2
0
3
4
6
Figure 1. On–Region Characteristics
ID
2
2.2
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
2.4
2.6
2.8
3.2
ID
Figure 2. Transfer Characteristics
0
2
4
10
R
0
1
2
3
4
6
0.07
0.085
0.095
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0
–50
2.0
2.5
3.0
1
100
1000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
VDS
≥
10 V
TJ = 100
°
C
25
°
C
–55
°
C
TJ = 25
°
C
VGS = 0 V
VGS = 10 V
ID = 1.5 A
VGS = 4.5 V
VGS = 4.5 V
ID = 1.5 A
1.2
4.5 V
3.8 V
3.1 V
2.4 V
1
1.6
3
6
8
10 V
–25
0
25
50
75
100
125
150
TJ = 125
°
C
5
0.09
0.08
0.5
2
5
1.0
1.5
0
5
10
15
20
25
30
2.7 V
0.6
0.5
0.4
0.3
0.2
0.1
0
0.075
10
100
°
C
2.9 V
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