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參數資料
| 型號： | MMSF3PO3HD |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS P-CHANNEL FIELD EFFECT TRANSISTORS |
| 中文描述： | TMOS是P溝道場效應晶體管 |
| 文件頁數： | 2/10頁 |
| 文件大?。?/td> | 329K |
| 代理商： | MMSF3PO3HD |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)(1)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
30
—
—
30
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
ON CHARACTERISTICS(2)
IDSS
—
—
—
—
1.0
10
μ
Adc
IGSS
—
5.0
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
1.0
—
1.5
3.9
2.0
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 4.5 Vdc, ID = 1.5 Adc)
RDS(on)
—
—
0.080
0.090
0.100
0.110
Ohm
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc)
gFS
3.0
5.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
1015
1420
pF
Output Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
—
470
660
Transfer Capacitance
—
135
190
SWITCHING CHARACTERISTICS(3)
Turn–On Delay Time
RG = 6.0
)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
26
52
ns
Rise Time
(VDS = 15 Vdc, ID = 3.0 Adc,
VGS = 4.5 Vdc,
—
102
204
Turn–Off Delay Time
—
67
134
Fall Time
—
69
138
Turn–On Delay Time
RG = 6.0
)
—
14
28
Rise Time
(VDS = 15 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc,
—
32
64
Turn–Off Delay Time
—
104
208
Fall Time
—
66
132
Gate Charge
VGS = 10 Vdc)
—
32.4
45
nC
(VDS = 24 Vdc, ID = 3.0 Adc,
—
2.7
—
—
9.0
—
—
6.9
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
1.3
0.85
2.0
—
Vdc
Reverse Recovery Time
dIS/dt = 100 A/
μ
s)
trr
ta
tb
—
31
—
ns
(IS = 3.0 Adc,
—
22
—
—
9.0
—
Reverse Recovery Stored Charge
QRR
—
0.034
—
μ
C
(1) Negative sign for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(3) Switching characteristics are independent of operating junction temperature.
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