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參數(shù)資料
| 型號(hào)： | MMSF3300R2 |
| 廠(chǎng)商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 6.7 A, 30 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大?。?/td> | 142K |
| 代理商： | MMSF3300R2 |
MMSF3300
http://onsemi.com
6
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
RG, GATE RESISTANCE (OHMS)
1
10
100
10
t,TIME
(ns)
VDD = 25 V
ID = 1.0 A
VGS = 10 V
TJ = 25°C
tr
td(on)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
18
V GS
,GA
TE-T
O-SOURCE
VOL
TAGE
(VOL
TS)
6
3
12
0
4
2
0
QG, TOTAL GATE CHARGE (nC)
VDS
,DRAIN-T
O-SOURCE
VOL
TAGE
(VOL
TS)
12
10
20
40
ID = 2.0 A
TJ = 25°C
30
VDS
VGS
QT
Q2
Q3
Q1
50
1000
tf
td(off)
8
69
15
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode are
very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse
recovery characteristics which play a major role in
determining switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of the
body diode itself. The body diode is a minority carrier device,
therefore it has a finite reverse recovery time, trr, due to the
storage of minority carrier charge, QRR, as shown in the
typical reverse recovery wave form of Figure 16. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery further
increases switching losses. Therefore, one would like a diode
with short trr and low QRR specifications to minimize these
losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current ringing.
The mechanisms at work are finite irremovable circuit
parasitic inductances and capacitances acted upon by high
di/dts. The diode’s negative di/dt during ta is directly
controlled by the device clearing the stored charge. However,
the positive di/dt during tb is an uncontrollable diode
characteristic and is usually the culprit that induces current
ringing. Therefore, when comparing diodes, the ratio of tb/ta
serves as a good indicator of recovery abruptness and thus
gives a comparative estimate of probable noise generated. A
ratio of 1 is considered ideal and values less than 0.5 are
considered snappy.
Compared to ON Semiconductor standard cell density low
voltage MOSFETs, high cell density MOSFET diodes are
faster (shorter trr), have less stored charge and a softer reverse
recovery characteristic. The softness advantage of the high
cell density diode means they can be forced through reverse
recovery at a higher di/dt than a standard cell MOSFET diode
without increasing the current ringing or the noise generated.
In addition, power dissipation incurred from switching the
diode will be less due to the shorter recovery time and lower
switching losses.
0.50
0.55
0.60
0.65
0.70
0
2
4
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
I S
,SOURCE
CURRENT
(AMPS)
3
0.75
0.80
1
5
8
VGS = 0 V
TJ = 25°C
6
7
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| MMSF3P02HDR2 | 功能描述:MOSFET 20V 3A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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