參數(shù)資料
型號(hào)： MMSF3300R2
廠(chǎng)商： ON SEMICONDUCTOR
元件分類(lèi)： JFETs
英文描述： 6.7 A, 30 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁(yè)數(shù)： 7/12頁(yè)
文件大?。?/td> 142K
代理商： MMSF3300R2
MMSF3300
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
0
4
8
10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
2.0
2.5
4.0
0
4
8
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
23
4
10
0
0.20
0.30
02
4
6
8
16
0.016
0.018
0.020
0.008
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.5
2.0
510
15
30
1
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
VDS ≥ 10 V
TJ = 125°C
25°C
-55°C
TJ = 25°C
VGS = 0 V
ID = 5.0 A
TJ = 25°C
VGS = 4.5 V
VGS = 10 V
ID = 10 A
3.0
3.5
56
7
8
9
10
10 V
-50
-25
0
25
50
75
100
125
150
TJ = 125°C
1.0
10
20
25
100°C
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
0
0.25
0.50
1.25
0.75
1.00
1.50
1.75
2.00
2
TJ = 25°C
1
6
2
6
10
0.10
0.002
0.004
0.006
0
0.5
0
0.1
3
7
5
9
3
7
1
5
9
0.15
0.25
0.05
0.014
0.010
0.012
12
6.0 V
4.5 V
4.1 V
3.7 V
3.3 V
3.1 V
2.9 V
25°C
VGS = 2.7 V
10 V
3.5 V
14
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